N-Channel MOSFET, 2.4 A, 500 V, 3-Pin IPAK Vishay IRFU420PBF

RS noliktavas nr.: 152-6352Ražotājs: VishayRažotāja kods: IRFU420PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

19 (Maximumn) nC

Minimum Operating Temperature

-55 °C

Height

2.39mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,20

Katrs (Paka ir 10) (bez PVN)

€ 1,452

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 2.4 A, 500 V, 3-Pin IPAK Vishay IRFU420PBF
Izvēlēties iepakojuma veidu

€ 1,20

Katrs (Paka ir 10) (bez PVN)

€ 1,452

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 2.4 A, 500 V, 3-Pin IPAK Vishay IRFU420PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 1,20€ 12,00
100 - 240€ 1,15€ 11,50
250 - 490€ 1,05€ 10,50
500 - 990€ 0,971€ 9,71
1000+€ 0,911€ 9,11

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

19 (Maximumn) nC

Minimum Operating Temperature

-55 °C

Height

2.39mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more