Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 72,50
€ 1,45 Katrs (tiek piegadats Rulli) (bez PVN)
€ 87,72
€ 1,754 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 72,50
€ 1,45 Katrs (tiek piegadats Rulli) (bez PVN)
€ 87,72
€ 1,754 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 120 | € 1,45 | € 7,25 |
125 - 245 | € 1,30 | € 6,50 |
250 - 495 | € 1,20 | € 6,00 |
500+ | € 1,15 | € 5,75 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Izcelsmes valsts
China
Produkta apraksts