N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Vishay IRFR430ATRPBF

RS noliktavas nr.: 165-7215Ražotājs: VishayRažotāja kods: IRFR430ATRPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.38mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,298

Katrs (Rulli ir 2000) (bez PVN)

€ 0,361

Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Vishay IRFR430ATRPBF

€ 0,298

Katrs (Rulli ir 2000) (bez PVN)

€ 0,361

Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Vishay IRFR430ATRPBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.38mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more