Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,35
Katrs (Tubina ir 25) (bez PVN)
€ 4,054
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 3,35
Katrs (Tubina ir 25) (bez PVN)
€ 4,054
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 25 | € 3,35 | € 83,75 |
50 - 100 | € 3,15 | € 78,75 |
125+ | € 2,85 | € 71,25 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts