Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF

RS noliktavas nr.: 541-0171PRažotājs: VishayRažotāja kods: IRFP360LCPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

400 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.31mm

Height

20.7mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 61,00

€ 6,10 Katrs (tiek piegadats lepakojuma) (bez PVN)

€ 73,81

€ 7,38 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF
Izvēlēties iepakojuma veidu

€ 61,00

€ 6,10 Katrs (tiek piegadats lepakojuma) (bez PVN)

€ 73,81

€ 7,38 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cena
10 - 24€ 6,10
25 - 49€ 5,70
50 - 99€ 5,30
100+€ 4,60

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

400 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.31mm

Height

20.7mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more