N-Channel MOSFET, 23 A, 500 V, 3-Pin TO-247AC Vishay IRFP23N50LPBF

RS noliktavas nr.: 708-4800Ražotājs: VishayRažotāja kods: IRFP23N50LPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

235 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.7mm

Produkta apraksts

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,30

Katrs (bez PVN)

€ 10,04

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 23 A, 500 V, 3-Pin TO-247AC Vishay IRFP23N50LPBF
Izvēlēties iepakojuma veidu

€ 8,30

Katrs (bez PVN)

€ 10,04

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 23 A, 500 V, 3-Pin TO-247AC Vishay IRFP23N50LPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 8,30
10 - 24€ 8,00
25 - 49€ 7,60
50 - 99€ 7,30
100+€ 6,90

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

235 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.7mm

Produkta apraksts

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more