Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.87mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.82mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 94,00
€ 4,70 Katrs (tiek piegadats Tubina) (bez PVN)
€ 113,74
€ 5,687 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
20
€ 94,00
€ 4,70 Katrs (tiek piegadats Tubina) (bez PVN)
€ 113,74
€ 5,687 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
20 - 48 | € 4,70 | € 9,40 |
50 - 98 | € 4,50 | € 9,00 |
100 - 198 | € 4,00 | € 8,00 |
200+ | € 3,75 | € 7,50 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.87mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.82mm
Minimum Operating Temperature
-55 °C
Produkta apraksts