Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Height
20.82mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 40,50
€ 4,05 Katrs (tiek piegadats Tubina) (bez PVN)
€ 49,00
€ 4,90 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 40,50
€ 4,05 Katrs (tiek piegadats Tubina) (bez PVN)
€ 49,00
€ 4,90 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
10 - 20 | € 4,05 | € 20,25 |
25 - 45 | € 3,75 | € 18,75 |
50 - 120 | € 3,50 | € 17,50 |
125+ | € 3,05 | € 15,25 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Height
20.82mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts