Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3+Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.45mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,44
Katrs (bez PVN)
€ 0,53
Katrs (Ieskaitot PVN)
1
€ 0,44
Katrs (bez PVN)
€ 0,53
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 0,44 |
5 - 9 | € 0,40 |
10+ | € 0,38 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3+Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.45mm