Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF

RS noliktavas nr.: 708-4799PRažotājs: VishayRažotāja kods: IRFIZ48GPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.8mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 145,00

€ 2,90 Katrs (tiek piegadats Tubina) (bez PVN)

€ 175,45

€ 3,509 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF
Izvēlēties iepakojuma veidu

€ 145,00

€ 2,90 Katrs (tiek piegadats Tubina) (bez PVN)

€ 175,45

€ 3,509 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cenaPer Penālis
50 - 120€ 2,90€ 14,50
125 - 245€ 2,75€ 13,75
250 - 495€ 2,65€ 13,25
500+€ 2,40€ 12,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.8mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more