Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 145,00
€ 2,90 Katrs (tiek piegadats Tubina) (bez PVN)
€ 175,45
€ 3,509 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
50
€ 145,00
€ 2,90 Katrs (tiek piegadats Tubina) (bez PVN)
€ 175,45
€ 3,509 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 120 | € 2,90 | € 14,50 |
125 - 245 | € 2,75 | € 13,75 |
250 - 495 | € 2,65 | € 13,25 |
500+ | € 2,40 | € 12,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Izcelsmes valsts
China
Produkta apraksts