Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.8mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,20
Katrs (Tubina ir 50) (bez PVN)
€ 1,452
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,20
Katrs (Tubina ir 50) (bez PVN)
€ 1,452
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,20 | € 60,00 |
100 - 200 | € 1,15 | € 57,50 |
250+ | € 1,10 | € 55,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.8mm
Izcelsmes valsts
China
Produkta apraksts