Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 1,15 | € 11,50 |
50 - 90 | € 1,05 | € 10,50 |
100 - 240 | € 0,975 | € 9,75 |
250 - 490 | € 0,905 | € 9,05 |
500+ | € 0,745 | € 7,45 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts