P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF

RS noliktavas nr.: 145-1873Ražotājs: VishayRažotāja kods: IRFI9Z14GPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.63mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

16.12mm

PRICED TO CLEAR

Yes

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,334

Katrs (Tubina ir 50) (bez PVN)

€ 0,404

Katrs (Tubina ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF

€ 0,334

Katrs (Tubina ir 50) (bez PVN)

€ 0,404

Katrs (Tubina ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.63mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

16.12mm

PRICED TO CLEAR

Yes

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more