Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,50
Katrs (Tubina ir 50) (bez PVN)
€ 0,605
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,50
Katrs (Tubina ir 50) (bez PVN)
€ 0,605
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts