N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF

RS noliktavas nr.: 145-1683Ražotājs: VishayRažotāja kods: IRFI620GPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,75

Katrs (Tubina ir 50) (bez PVN)

€ 2,118

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF

€ 1,75

Katrs (Tubina ir 50) (bez PVN)

€ 2,118

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,75€ 87,50
100 - 200€ 1,65€ 82,50
250+€ 1,60€ 80,00

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JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more