Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,513
Katrs (Tubina ir 50) (bez PVN)
€ 0,621
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,513
Katrs (Tubina ir 50) (bez PVN)
€ 0,621
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,513 | € 25,65 |
100 - 200 | € 0,488 | € 24,40 |
250+ | € 0,462 | € 23,10 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts