Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Izcelsmes valsts
Philippines
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,35
Katrs (Tubina ir 100) (bez PVN)
€ 1,634
Katrs (Tubina ir 100) (Ieskaitot PVN)
100
€ 1,35
Katrs (Tubina ir 100) (bez PVN)
€ 1,634
Katrs (Tubina ir 100) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
100 - 100 | € 1,35 | € 135,00 |
200 - 400 | € 1,30 | € 130,00 |
500+ | € 1,25 | € 125,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Izcelsmes valsts
Philippines
Produkta apraksts