Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 38,30
€ 0,383 Katrs (Tubina ir 100) (bez PVN)
€ 46,34
€ 0,463 Katrs (Tubina ir 100) (Ieskaitot PVN)
100
€ 38,30
€ 0,383 Katrs (Tubina ir 100) (bez PVN)
€ 46,34
€ 0,463 Katrs (Tubina ir 100) (Ieskaitot PVN)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
100 - 100 | € 0,383 | € 38,30 |
200 - 400 | € 0,36 | € 36,00 |
500+ | € 0,325 | € 32,50 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Produkta apraksts