N-Channel MOSFET, 490 mA, 400 V, 4-Pin HVMDIP Vishay IRFD320PBF

RS noliktavas nr.: 145-2622Ražotājs: VishayRažotāja kods: IRFD320PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

490 mA

Maximum Drain Source Voltage

400 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.29mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,15

Katrs (Tubina ir 100) (bez PVN)

€ 1,392

Katrs (Tubina ir 100) (Ieskaitot PVN)

N-Channel MOSFET, 490 mA, 400 V, 4-Pin HVMDIP Vishay IRFD320PBF

€ 1,15

Katrs (Tubina ir 100) (bez PVN)

€ 1,392

Katrs (Tubina ir 100) (Ieskaitot PVN)

N-Channel MOSFET, 490 mA, 400 V, 4-Pin HVMDIP Vishay IRFD320PBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

490 mA

Maximum Drain Source Voltage

400 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.29mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more