Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,15
Katrs (Tubina ir 100) (bez PVN)
€ 1,392
Katrs (Tubina ir 100) (Ieskaitot PVN)
100
€ 1,15
Katrs (Tubina ir 100) (bez PVN)
€ 1,392
Katrs (Tubina ir 100) (Ieskaitot PVN)
100
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts