N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF

RS noliktavas nr.: 541-1039PRažotājs: VishayRažotāja kods: IRFD110PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Minimum Operating Temperature

-55 °C

Height

3.37mm

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,55

Katrs (tiek piegadats Lente) (bez PVN)

€ 3,09

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
Izvēlēties iepakojuma veidu

€ 2,55

Katrs (tiek piegadats Lente) (bez PVN)

€ 3,09

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cena
1 - 19€ 2,55
20 - 24€ 0,66
25 - 49€ 0,59
50+€ 0,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Minimum Operating Temperature

-55 °C

Height

3.37mm

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more