Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 13,88
€ 0,69 Katrs (tiek piegadats Lente) (bez PVN)
€ 16,79
€ 0,84 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
20
€ 13,88
€ 0,69 Katrs (tiek piegadats Lente) (bez PVN)
€ 16,79
€ 0,84 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
20 - 24 | € 0,69 |
25 - 49 | € 0,61 |
50+ | € 0,56 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Produkta apraksts