Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 24,50
€ 2,45 Katrs (tiek piegadats Lente) (bez PVN)
€ 29,64
€ 2,96 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
10
€ 24,50
€ 2,45 Katrs (tiek piegadats Lente) (bez PVN)
€ 29,64
€ 2,96 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
10 - 49 | € 2,45 |
50 - 99 | € 2,30 |
100 - 249 | € 2,20 |
250+ | € 2,10 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts