N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB Vishay IRFBC30APBF

RS noliktavas nr.: 145-1619Ražotājs: VishayRažotāja kods: IRFBC30APBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,80

Katrs (Tubina ir 50) (bez PVN)

€ 3,388

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB Vishay IRFBC30APBF

€ 2,80

Katrs (Tubina ir 50) (bez PVN)

€ 3,388

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB Vishay IRFBC30APBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 2,80€ 140,00
100 - 200€ 2,35€ 117,50
250+€ 2,25€ 112,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.41mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more