P-Channel MOSFET, 6.1 A, 50 V, 3-Pin TO-220AB Vishay IRF9Z20PBF

RS noliktavas nr.: 145-1714Ražotājs: VishayRažotāja kods: IRF9Z20PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

50 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,70

Katrs (Tubina ir 50) (bez PVN)

€ 2,057

Katrs (Tubina ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 6.1 A, 50 V, 3-Pin TO-220AB Vishay IRF9Z20PBF

€ 1,70

Katrs (Tubina ir 50) (bez PVN)

€ 2,057

Katrs (Tubina ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 6.1 A, 50 V, 3-Pin TO-220AB Vishay IRF9Z20PBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,70€ 85,00
100 - 200€ 1,65€ 82,50
250+€ 1,55€ 77,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

50 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more