P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK Vishay IRF9640STRRPBF

RS noliktavas nr.: 165-6002Ražotājs: VishayRažotāja kods: IRF9640STRRPBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,773

Katrs (Rulli ir 800) (bez PVN)

€ 0,935

Katrs (Rulli ir 800) (Ieskaitot PVN)

P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK Vishay IRF9640STRRPBF

€ 0,773

Katrs (Rulli ir 800) (bez PVN)

€ 0,935

Katrs (Rulli ir 800) (Ieskaitot PVN)

P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK Vishay IRF9640STRRPBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more