P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB Vishay IRF9520PBF

RS noliktavas nr.: 708-5140PRažotājs: VishayRažotāja kods: IRF9520PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,65

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,996

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB Vishay IRF9520PBF
Izvēlēties iepakojuma veidu

€ 1,65

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,996

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB Vishay IRF9520PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
10 - 40€ 1,65€ 16,50
50 - 90€ 1,65€ 16,50
100 - 240€ 1,40€ 14,00
250 - 490€ 1,35€ 13,50
500+€ 1,10€ 11,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more