Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,55
Katrs (Tubina ir 50) (bez PVN)
€ 1,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,55
Katrs (Tubina ir 50) (bez PVN)
€ 1,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,55 | € 77,50 |
100 - 200 | € 1,45 | € 72,50 |
250+ | € 1,40 | € 70,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Produkta apraksts