N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF

RS noliktavas nr.: 708-5134PRažotājs: VishayRažotāja kods: IRF510PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.01mm

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,45

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,754

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF
Izvēlēties iepakojuma veidu

€ 1,45

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,754

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
10 - 90€ 1,45€ 14,50
100 - 240€ 1,10€ 11,00
250 - 490€ 0,913€ 9,13
500 - 990€ 0,811€ 8,11
1000+€ 0,59€ 5,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.01mm

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more