Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3

RS noliktavas nr.: 178-3718Ražotājs: Vishay SiliconixRažotāja kods: SQJ431AEP-T1_GE3
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

200 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 2 040,00

€ 0,68 Katrs (Rulli ir 3000) (bez PVN)

€ 2 468,40

€ 0,823 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3

€ 2 040,00

€ 0,68 Katrs (Rulli ir 3000) (bez PVN)

€ 2 468,40

€ 0,823 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

200 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more