Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
€ 12,35
€ 0,494 Katrs (Paka ir 25) (bez PVN)
€ 14,94
€ 0,598 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 12,35
€ 0,494 Katrs (Paka ir 25) (bez PVN)
€ 14,94
€ 0,598 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,494 | € 12,35 |
100 - 475 | € 0,35 | € 8,75 |
500 - 975 | € 0,292 | € 7,30 |
1000+ | € 0,248 | € 6,20 |
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Izcelsmes valsts
China