Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Width
3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,439
Katrs (Rulli ir 3000) (bez PVN)
€ 0,531
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,439
Katrs (Rulli ir 3000) (bez PVN)
€ 0,531
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Width
3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V