P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

RS noliktavas nr.: 178-3697Ražotājs: Vishay SiliconixRažotāja kods: SiSH617DN-T1-GE3
brand-logo
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.15mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.07mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,289

Katrs (Rulli ir 3000) (bez PVN)

€ 0,35

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

€ 0,289

Katrs (Rulli ir 3000) (bez PVN)

€ 0,35

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.15mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.07mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more