Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

RS noliktavas nr.: 178-3691Ražotājs: Vishay SiliconixRažotāja kods: SIRC06DP-T1-GE3
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.7V

Height

1.07mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,321

Katrs (Rulli ir 3000) (bez PVN)

€ 0,388

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

€ 0,321

Katrs (Rulli ir 3000) (bez PVN)

€ 0,388

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.7V

Height

1.07mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more