Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
SC-70
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Width
1.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,316
Katrs (Rulli ir 3000) (bez PVN)
€ 0,382
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,316
Katrs (Rulli ir 3000) (bez PVN)
€ 0,382
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
SC-70
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Width
1.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China