Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Izcelsmes valsts
China
€ 11,00
€ 2,20 Katrs (Paka ir 5) (bez PVN)
€ 13,31
€ 2,662 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 11,00
€ 2,20 Katrs (Paka ir 5) (bez PVN)
€ 13,31
€ 2,662 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 2,20 | € 11,00 |
50 - 95 | € 1,85 | € 9,25 |
100 - 495 | € 1,45 | € 7,25 |
500 - 995 | € 1,25 | € 6,25 |
1000+ | € 1,10 | € 5,50 |
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Izcelsmes valsts
China