Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,737
Katrs (Rulli ir 3000) (bez PVN)
€ 0,892
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,737
Katrs (Rulli ir 3000) (bez PVN)
€ 0,892
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Izcelsmes valsts
China