Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

RS noliktavas nr.: 144-5248Ražotājs: ToshibaRažotāja kods: TTD1415B,S4X(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Izcelsmes valsts

Japan

Produkta apraksts

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,636

Katrs (Paka ir 10) (bez PVN)

€ 0,77

Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

10

Pieejams komplektos pa 10
10€ 6,36
20€ 12,72
30€ 16,86
40€ 22,48
50€ 28,10
60€ 33,72
70€ 39,34
80€ 44,96
90€ 50,58
100€ 56,20
110€ 61,82
120€ 67,44
130€ 73,06
140€ 78,68
150€ 84,30

€ 0,636

Katrs (Paka ir 10) (bez PVN)

€ 0,77

Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Noliktavas stāvoklis patreiz nav pieejams

10

Pieejams komplektos pa 10
10€ 6,36
20€ 12,72
30€ 16,86
40€ 22,48
50€ 28,10
60€ 33,72
70€ 39,34
80€ 44,96
90€ 50,58
100€ 56,20
110€ 61,82
120€ 67,44
130€ 73,06
140€ 78,68
150€ 84,30

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 20€ 0,636€ 6,36
30+€ 0,562€ 5,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Izcelsmes valsts

Japan

Produkta apraksts

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more