Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,35
Katrs (Paka ir 5) (bez PVN)
€ 1,634
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,35
Katrs (Paka ir 5) (bez PVN)
€ 1,634
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,35 | € 6,75 |
25+ | € 1,15 | € 5,75 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts