Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,412
Katrs (Rulli ir 5000) (bez PVN)
€ 0,499
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 0,412
Katrs (Rulli ir 5000) (bez PVN)
€ 0,499
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
5000 - 5000 | € 0,412 | € 2 060,00 |
10000+ | € 0,381 | € 1 905,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.1mm
Forward Diode Voltage
1.2V
Height
0.85mm