Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN TK39J60W5,S1VQ(O
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
74 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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€ 3,60
€ 3,60 Katrs (bez PVN)
€ 4,36
€ 4,36 Katrs (Ieskaitot PVN)
1
€ 3,60
€ 3,60 Katrs (bez PVN)
€ 4,36
€ 4,36 Katrs (Ieskaitot PVN)
1
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Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 3,60 |
| 10 - 19 | € 2,35 |
| 20 - 39 | € 2,25 |
| 40 - 79 | € 2,20 |
| 80+ | € 2,15 |
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
74 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products