N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1

RS noliktavas nr.: 796-5083Ražotājs: ToshibaRažotāja kods: TK30E06N1
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,946

Katrs (Paka ir 5) (bez PVN)

€ 1,145

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
Izvēlēties iepakojuma veidu

€ 0,946

Katrs (Paka ir 5) (bez PVN)

€ 1,145

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,946€ 4,73
50 - 120€ 0,86€ 4,30
125 - 245€ 0,816€ 4,08
250 - 495€ 0,743€ 3,72
500+€ 0,681€ 3,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more