Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Produkta apraksts
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,946
Katrs (Paka ir 5) (bez PVN)
€ 1,145
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,946
Katrs (Paka ir 5) (bez PVN)
€ 1,145
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 0,946 | € 4,73 |
50 - 120 | € 0,86 | € 4,30 |
125 - 245 | € 0,816 | € 4,08 |
250 - 495 | € 0,743 | € 3,72 |
500+ | € 0,681 | € 3,40 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Produkta apraksts