Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3PN TK12J60W,S1VQ(O
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
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€ 2,70
€ 2,70 Katrs (bez PVN)
€ 3,27
€ 3,27 Katrs (Ieskaitot PVN)
1
€ 2,70
€ 2,70 Katrs (bez PVN)
€ 3,27
€ 3,27 Katrs (Ieskaitot PVN)
1
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| Daudzums | Vienības cena |
|---|---|
| 1 - 4 | € 2,70 |
| 5 - 9 | € 2,55 |
| 10 - 24 | € 2,40 |
| 25 - 49 | € 2,25 |
| 50+ | € 2,15 |
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products