Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

RS noliktavas nr.: 796-5077Ražotājs: ToshibaRažotāja kods: TK100E08N1
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,50

€ 3,50 Katrs (bez PVN)

€ 4,24

€ 4,24 Katrs (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 3,50
2€ 7,00
3€ 10,50
4€ 14,00
5€ 17,50
6€ 21,00
7€ 24,50
8€ 28,00
9€ 31,50
10€ 33,50
11€ 36,85
12€ 40,20
13€ 43,55
14€ 46,90
15€ 50,25

€ 3,50

€ 3,50 Katrs (bez PVN)

€ 4,24

€ 4,24 Katrs (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 3,50
2€ 7,00
3€ 10,50
4€ 14,00
5€ 17,50
6€ 21,00
7€ 24,50
8€ 28,00
9€ 31,50
10€ 33,50
11€ 36,85
12€ 40,20
13€ 43,55
14€ 46,90
15€ 50,25

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cena
1 - 9€ 3,50
10 - 19€ 3,35
20 - 49€ 3,15
50 - 249€ 2,80
250+€ 2,60

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more