Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
€ 11,20
€ 2,80 Katrs (Paka ir 4) (bez PVN)
€ 13,55
€ 3,388 Katrs (Paka ir 4) (Ieskaitot PVN)
Standarts
4
€ 11,20
€ 2,80 Katrs (Paka ir 4) (bez PVN)
€ 13,55
€ 3,388 Katrs (Paka ir 4) (Ieskaitot PVN)
Standarts
4
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
4 - 16 | € 2,80 | € 11,20 |
20 - 76 | € 2,35 | € 9,40 |
80 - 196 | € 2,05 | € 8,20 |
200 - 396 | € 1,95 | € 7,80 |
400+ | € 1,90 | € 7,60 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts