Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK

RS noliktavas nr.: 171-2411Ražotājs: ToshibaRažotāja kods: T2N7002BK
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

±20 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Height

0.9mm

Forward Diode Voltage

1.1V

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,045

Katrs (Rulli ir 3000) (bez PVN)

€ 0,054

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK

€ 0,045

Katrs (Rulli ir 3000) (bez PVN)

€ 0,054

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,045€ 135,00
6000 - 6000€ 0,044€ 132,00
9000+€ 0,041€ 123,00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

±20 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Height

0.9mm

Forward Diode Voltage

1.1V

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more