Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
Thailand
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,045
Katrs (Rulli ir 3000) (bez PVN)
€ 0,054
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,045
Katrs (Rulli ir 3000) (bez PVN)
€ 0,054
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,045 | € 135,00 |
6000 - 6000 | € 0,044 | € 132,00 |
9000+ | € 0,041 | € 123,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
Thailand