Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
UF6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Number of Elements per Chip
1
Width
2mm
Length
1.7mm
Typical Gate Charge @ Vgs
16.8 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
0.7mm
Izcelsmes valsts
Thailand
€ 3,20
€ 0,128 Katrs (tiek piegadats Rulli) (bez PVN)
€ 3,87
€ 0,155 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
€ 3,20
€ 0,128 Katrs (tiek piegadats Rulli) (bez PVN)
€ 3,87
€ 0,155 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
UF6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Number of Elements per Chip
1
Width
2mm
Length
1.7mm
Typical Gate Charge @ Vgs
16.8 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
0.7mm
Izcelsmes valsts
Thailand