Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-723
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Width
1.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
0.8mm
Height
0.5mm
Izcelsmes valsts
Thailand
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,046
Katrs (Rulli ir 8000) (bez PVN)
€ 0,056
Katrs (Rulli ir 8000) (Ieskaitot PVN)
8000
€ 0,046
Katrs (Rulli ir 8000) (bez PVN)
€ 0,056
Katrs (Rulli ir 8000) (Ieskaitot PVN)
8000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
8000 - 8000 | € 0,046 | € 368,00 |
16000+ | € 0,043 | € 344,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-723
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Width
1.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
0.8mm
Height
0.5mm
Izcelsmes valsts
Thailand