N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R

RS noliktavas nr.: 171-2402Ražotājs: ToshibaRažotāja kods: SSM3K339R
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Width

1.8mm

Number of Elements per Chip

1

Height

0.7mm

Forward Diode Voltage

1.2V

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,091

Katrs (Rulli ir 3000) (bez PVN)

€ 0,11

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R

€ 0,091

Katrs (Rulli ir 3000) (bez PVN)

€ 0,11

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,091€ 273,00
6000 - 6000€ 0,087€ 261,00
9000+€ 0,082€ 246,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Width

1.8mm

Number of Elements per Chip

1

Height

0.7mm

Forward Diode Voltage

1.2V

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more