Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K335R

RS noliktavas nr.: 171-2542Ražotājs: ToshibaRažotāja kods: SSM3K335R
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,85

€ 0,177 Katrs (Paka ir 50) (bez PVN)

€ 10,71

€ 0,214 Katrs (Paka ir 50) (Ieskaitot PVN)

Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K335R
Izvēlēties iepakojuma veidu

€ 8,85

€ 0,177 Katrs (Paka ir 50) (bez PVN)

€ 10,71

€ 0,214 Katrs (Paka ir 50) (Ieskaitot PVN)

Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K335R
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
50 - 100€ 0,177€ 8,85
150 - 450€ 0,138€ 6,90
500 - 950€ 0,114€ 5,70
1000+€ 0,103€ 5,15

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more