Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Height
0.9mm
Izcelsmes valsts
Thailand
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,173
Katrs (Rulli ir 3000) (bez PVN)
€ 0,209
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,173
Katrs (Rulli ir 3000) (bez PVN)
€ 0,209
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,173 | € 519,00 |
6000 - 6000 | € 0,165 | € 495,00 |
9000+ | € 0,157 | € 471,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Height
0.9mm
Izcelsmes valsts
Thailand