Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
5.5mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,54
€ 0,277 Katrs (Paka ir 20) (bez PVN)
€ 6,70
€ 0,335 Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 5,54
€ 0,277 Katrs (Paka ir 20) (bez PVN)
€ 6,70
€ 0,335 Katrs (Paka ir 20) (Ieskaitot PVN)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 20 - 40 | € 0,277 | € 5,54 |
| 60 - 100 | € 0,242 | € 4,84 |
| 120 - 220 | € 0,207 | € 4,14 |
| 240 - 460 | € 0,203 | € 4,06 |
| 480+ | € 0,197 | € 3,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
5.5mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products